tl(re,rme,se,oe,ye,ge)28c(f) 2007-10-01 1 toshiba ingaa ? p led tlre28c(f),tlrme28c(f),tlse28c(f),tloe28c(f), tlye28c(f),TLGE28C(f) panel circuit indicator ? lead(pb)-free products (lead: sn-ag-cu) ? 4.3x5mm ? ingaa ? p technology ? colored transparent lens ? lineup: 6 colors (red,yellow, green) ? excellent low current light output ? high intensity light emission ? applications: message boards, dashboard displays lineup absolute maximum ratings (ta = 25c) product name forward current i f (ma) reverse voltage v r (v) power dissipation p d (mw) operating temperature t opr (c) storage temperature t stg (c) tlre28c(f) 50 4 120 tlrme28c(f) 50 4 120 tlse28c(f) 50 4 120 tloe28c(f) 50 4 120 tlye28c(f) 50 4 120 TLGE28C(f) 50 4 120 ?40~100 ? 40~120 note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). unit: mm jedec D eiaj D toshiba 4-5aq1 weight: 0.25 g (typ.) product name color material tlre28c(f) red ingaa ?p tlrme28c(f) red ingaa ?p tlse28c(f) red ingaa ?p tloe28c(f) orange ingaa ?p tlye28c(f) yellow ingaa ?p TLGE28C(f) green ingaa ?p
tl(re,rme,se,oe,ye,ge)28c(f) 2007-10-01 2 electrical and opti cal characteristics (ta = 25c) typ. emission wavelength luminous intensity i v forward voltage v f reverse current i r product name d p ? i f min typ. i f typ. max i f max v r tlre28c(f) 630 (644) 20 20 85 200 20 1.9 2.4 20 50 4 tlrme28c(f) 626 (636) 23 20 85 200 20 1.9 2.4 20 50 4 tlse28c(f) 613 (623) 20 20 85 300 20 1.9 2.4 20 50 4 tloe28c(f) 605 (612) 20 20 153 500 20 2.0 2.4 20 50 4 tlye28c(f) 587 (590) 17 20 153 350 20 2.0 2.4 20 50 4 TLGE28C(f) 571 (574) 17 20 47.6 150 20 2.0 2.4 20 50 4 unit nm ma mcd ma v ma a v please be careful of the following: ? soldering temperature: 260c max, soldering time: 3 s max (soldering portion of lead: below the lead stopper of the device) ? if the lead is formed, the lead should be formed up to below the lead stopper of the device without forming stress to the resin. soldering should be performed after lead forming. ? this visible led lamp also emits some ir light. if a photodetector is located near the led lamp, please ensure that it will not be affected by this ir light.
tl(re,rme,se,oe,ye,ge)28c(f) 2007-10-01 3 tlre28c(f) relative luminous intensity ? wavelength wavelength (nm) relative luminous intensity 1.0 0 580 0.8 0.6 0.4 0.2 600 620 640 660 680 700 i f = 20ma ta = 25 c i f ? v f forward voltage v f (v) forward current i f (ma) 1 100 1.6 50 30 10 5 3 1.7 1.8 1.9 2.0 2.1 2.2 2.3 ta = 25 c i v ? tc case temperature tc (c) relative luminous intensity i v 80 60 40 20 0 ? 20 10 0.1 1 0.5 0.3 3 5 i v ? i f forward current i f (ma) luminous intensity i v (mcd) 3000 10 1 1000 100 10 100 ta = 25 c i f ? ta ambient temperature ta (c) allowable forward current i f (ma) 80 0 0 60 40 20 20 40 60 80 100 120 radiation pattern
tl(re,rme,se,oe,ye,ge)28c(f) 2007-10-01 4 tlrme28c(f) relative luminous intensity ? wavelength wavelength (nm) relative luminous intensity 1.0 0 580 0.8 0.6 0.4 0.2 600 620 640 660 680 700 i f = 20ma ta = 25 c i f ? v f forward voltage v f (v) forward current i f (ma) 1 100 1.6 50 30 10 5 3 1.7 1.8 1.9 2.0 2.1 2.2 2.3 ta = 25 c i v ? tc case temperature tc (c) relative luminous intensity i v 80 60 40 20 0 ? 20 10 0.1 1 0.5 0.3 3 5 i f ? ta ambient temperature ta (c) allowable forward current i f (ma) 80 0 0 60 40 20 20 40 60 80 100 120 i v ? i f forward current i f (ma) luminous intensity i v (mcd) 3000 10 1 1000 100 10 100 ta = 25 c radiation pattern
tl(re,rme,se,oe,ye,ge)28c(f) 2007-10-01 5 tlse28c(f) relative luminous intensity ? wavelength wavelength (nm) relative luminous intensity 1.0 0 560 0.8 0.6 0.4 0.2 580 600 620 640 660 680 i f = 20ma ta = 25 c i v ? tc case temperature tc (c) relative luminous intensity i v 80 60 40 20 0 ? 20 3 0.1 1 0.5 0.3 i f ? ta ambient temperature ta (c) allowable forward current i f (ma) 80 0 0 60 40 20 20 40 60 80 100 120 i v ? i f forward current i f (ma) luminous intensity i v (mcd) 10000 10 1 1000 100 10 100 ta = 25 c i f ? v f forward voltage v f (v) forward current i f (ma) 1 100 1.6 50 30 10 5 3 1.7 1.8 1.9 2.0 2.1 2.2 2.3 ta = 25 c radiation pattern
tl(re,rme,se,oe,ye,ge)28c(f) 2007-10-01 6 tloe28c(f) 2.0 1.6 2.3 50 30 10 3 1 1.7 2.1 5 100 1.8 1.9 2.2 ta = 25c relative luminous intensity ? wavelength wavelength (nm) relative luminous intensity i f = 20ma ta = 25 c i v ? tc case temperature tc (c) relative luminous intensity i v 80 60 40 20 0 ? 20 3 0.1 1 0.5 0.3 i f ? ta ambient temperature ta (c) allowable forward current i f (ma) 80 0 0 60 40 20 20 40 60 80 100 120 i f ? v f forward voltage v f (v) forward current i f (ma) i v ? i f forward current i f (ma) luminous intensity i v (mcd) 10000 10 1 1000 100 10 100 ta = 25 c radiation pattern 580 540 660 0.8 0 0.6 1.0 0.2 0.4 560 600 620 640 i f = 20 ma ta = 25c
tl(re,rme,se,oe,ye,ge)28c(f) 2007-10-01 7 tlye28c(f) 1.0 0 540 0.8 0.6 0.4 0.2 560 580 600 620 640 660 relative luminous intensity ? wavelength wavelength (nm) relative luminous intensity i f = 20ma ta = 25 c i v ? tc case temperature tc (c) relative luminous intensity i v 80 60 40 20 0 ? 20 3 0.1 1 0.5 0.3 i f ? ta ambient temperature ta (c) allowable forward current i f (ma) 80 0 0 60 40 20 20 40 60 80 100 120 i f ? v f forward voltage v f (v) forward current i f (ma) 1 100 1.6 50 30 10 5 3 1.7 1.8 1.9 2.0 2.1 2.2 2.3 ta = 25 c i v ? i f forward current i f (ma) luminous intensity i v (mcd) 10000 10 1 1000 100 10 100 ta = 25 c radiation pattern
tl(re,rme,se,oe,ye,ge)28c(f) 2007-10-01 8 TLGE28C(f) 1.0 0 520 0.8 0.6 0.4 0.2 540 560 580 600 620 640 relative luminous intensity ? wavelength wavelength (nm) relative luminous intensity i f = 20ma ta = 25 c i v ? tc case temperature tc (c) relative luminous intensity i v 80 60 40 20 0 ? 20 10 0.1 1 0.5 0.3 3 5 i f ? ta ambient temperature ta (c) allowable forward current i f (ma) 80 0 0 60 40 20 20 40 60 80 100 120 i f ? v f forward voltage v f (v) forward current i f (ma) 1 100 1.6 50 30 10 5 3 1.7 1.8 1.9 2.0 2.1 2.2 2.3 ta = 25 c i v ? i f forward current i f (ma) luminous intensity i v (mcd) 3000 10 1 1000 100 10 100 ta = 25 c radiation pattern
tl(re,rme,se,oe,ye,ge)28c(f) 2007-10-01 9 restrictions on product use 20070701-en ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? gaas(gallium arsenide) is used in this product. the dus t or vapor is harmful to the human body. do not break, cut, crush or dissolve chemically. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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